BoroGaN
French-Singaporean research project (2016–2019) funded by ANR, aiming to demonstrate GaN HEMT transistors with Boron Nitride heat spreaders
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BoroGaN
Summary
BoroGaN is a science project[1].
Key Facts
- BoroGaN is in the country of France[2].
- BoroGaN is in the country of Singapore[3].
- BoroGaN's instance of is recorded as science project[4].
- BoroGaN's instance of is recorded as ANR project[5].
- BoroGaN's start time is recorded as +2016-10-21T00:00:00Z[6].
- BoroGaN's end time is recorded as +2019-10-20T00:00:00Z[7].
- BoroGaN's participant is recorded as III V Lab[8].
- BoroGaN's participant is recorded as Nanyang Technological University[9].
- BoroGaN's official website is recorded as http://www.borogan.net[10].
- BoroGaN's main subject is recorded as high-electron-mobility transistor[11].
- BoroGaN's main subject is recorded as boron nitride[12].
- BoroGaN's main subject is recorded as gallium nitride[13].
- BoroGaN's Dimensions grant ID is recorded as 7737725[14].
- BoroGaN's funder is recorded as Agence Nationale de la Recherche[15].
- BoroGaN's funder is recorded as National Research Foundation[16].
- BoroGaN's principal investigator is recorded as Nicolas Michel[17].
- BoroGaN's ANR project ID is recorded as ANR-16-CE08-0036[18].