high-electron-mobility transistor
field-effect transistor incorporating a heterojunction as the channel
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high-electron-mobility transistor
Summary
high-electron-mobility transistor ranks in the top 2% of general entities by monthly Wikipedia readership (125 views/month).[1]
Key Facts
- high-electron-mobility transistor's GND ID is recorded as 4211873-6[2].
- high-electron-mobility transistor's subclass of is recorded as field-effect transistor[3].
- high-electron-mobility transistor's Freebase ID is recorded as /m/03g6n8[4].
- high-electron-mobility transistor's Microsoft Academic ID is recorded as 132882038[5].
- high-electron-mobility transistor's Microsoft Academic ID is recorded as 162057924[6].
- high-electron-mobility transistor's OpenAlex ID is recorded as C162057924[7].
- high-electron-mobility transistor's OpenAlex ID is recorded as C132882038[8].
Why It Matters
high-electron-mobility transistor ranks in the top 2% of general entities by monthly Wikipedia readership (125 views/month).[1] It has Wikipedia articles in 16 language editions, a strong signal of global cultural recognition.[9] It is known by 23 alternative names across languages and contexts.[10]