Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications

Research article (IEEE Transactions on Electron Devices, 2023) · cited 13× · AI/ML
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Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications

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Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications. Retrieved May 24, 2026, from https://4ort.xyz/entity/vertically-stacked-nanosheet-fet-charge-trapping-memory-and-synapse-with-linear-weight-adjustability-for-neuromorphic-co
MLA “Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/vertically-stacked-nanosheet-fet-charge-trapping-memory-and-synapse-with-linear-weight-adjustability-for-neuromorphic-co.
BibTeX @misc{4ortxyz_vertically-stacked-nanosheet-fet-charge-trapping-memory-and-synapse-with-linear-weight-adjustability-for-neuromorphic-co_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Vertically Stacked Nanosheet FET: Charge- Trapping Memory and Synapse With Linear Weight Adjustability for Neuromorphic Computing Applications}}, year = {2026}, url = {https://4ort.xyz/entity/vertically-stacked-nanosheet-fet-charge-trapping-memory-and-synapse-with-linear-weight-adjustability-for-neuromorphic-co}, note = {Accessed: 2026-05-24}}
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