Two- and three-terminal HfO<sub>2</sub>-based multilevel resistive memories for neuromorphic analog synaptic elements

Research article (Neuromorphic Computing and Engineering, 2021) · cited 18× · AI/ML
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Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements

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Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Two- and three-terminal HfO<sub>2</sub>-based multilevel resistive memories for neuromorphic analog synaptic elements. Retrieved May 24, 2026, from https://4ort.xyz/entity/two-and-three-terminal-hfo-sub-2-sub-based-multilevel-resistive-memories-for-neuromorphic-analog-synaptic-elements
MLA “Two- and three-terminal HfO<sub>2</sub>-based multilevel resistive memories for neuromorphic analog synaptic elements.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/two-and-three-terminal-hfo-sub-2-sub-based-multilevel-resistive-memories-for-neuromorphic-analog-synaptic-elements.
BibTeX @misc{4ortxyz_two-and-three-terminal-hfo-sub-2-sub-based-multilevel-resistive-memories-for-neuromorphic-analog-synaptic-elements_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Two- and three-terminal HfO<sub>2</sub>-based multilevel resistive memories for neuromorphic analog synaptic elements}}, year = {2026}, url = {https://4ort.xyz/entity/two-and-three-terminal-hfo-sub-2-sub-based-multilevel-resistive-memories-for-neuromorphic-analog-synaptic-elements}, note = {Accessed: 2026-05-24}}
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