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Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si

Research article (Applied Physics Letters, 2022) · cited 17× · AI/ML
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Single β-Ga2O3 nanowire based lateral FinFET on Si

Summary

Single β-Ga2O3 nanowire based lateral FinFET on Si is a scholarly article[1].

Key Facts

  • Single β-Ga2O3 nanowire based lateral FinFET on Si's instance of is recorded as scholarly article[2].

References

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Direct Wikidata claims

  1. [2] ↑ . wikidata.org.

Class ancestry

  1. [1] ↑ . Wikidata. wikidata.org.

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APA 4ort.xyz Knowledge Graph. (2026). Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si. Retrieved May 24, 2026, from https://4ort.xyz/entity/single-i-i-ga2o3-nanowire-based-lateral-finfet-on-si
MLA “Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/single-i-i-ga2o3-nanowire-based-lateral-finfet-on-si.
BibTeX @misc{4ortxyz_single-i-i-ga2o3-nanowire-based-lateral-finfet-on-si_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si}}, year = {2026}, url = {https://4ort.xyz/entity/single-i-i-ga2o3-nanowire-based-lateral-finfet-on-si}, note = {Accessed: 2026-05-24}}
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