Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs

Research article (IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, 2021) · cited 10× · AI/ML
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Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs

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Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs. Retrieved May 24, 2026, from https://4ort.xyz/entity/parasitic-inductance-design-for-preventing-oscillatory-false-triggering-of-parallel-connected-gan-fets
MLA “Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/parasitic-inductance-design-for-preventing-oscillatory-false-triggering-of-parallel-connected-gan-fets.
BibTeX @misc{4ortxyz_parasitic-inductance-design-for-preventing-oscillatory-false-triggering-of-parallel-connected-gan-fets_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs}}, year = {2026}, url = {https://4ort.xyz/entity/parasitic-inductance-design-for-preventing-oscillatory-false-triggering-of-parallel-connected-gan-fets}, note = {Accessed: 2026-05-24}}
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