One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices
Summary
One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices is a scholarly article[1].
Key Facts
One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices. Retrieved May 24, 2026, from https://4ort.xyz/entity/one-transistortwo-memristor-based-on-amorphous-indiumgalliumzinc-oxide-for-neuromorphic-synaptic-devices
MLA“One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/one-transistortwo-memristor-based-on-amorphous-indiumgalliumzinc-oxide-for-neuromorphic-synaptic-devices.
BibTeX@misc{4ortxyz_one-transistortwo-memristor-based-on-amorphous-indiumgalliumzinc-oxide-for-neuromorphic-synaptic-devices_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices}}, year = {2026}, url = {https://4ort.xyz/entity/one-transistortwo-memristor-based-on-amorphous-indiumgalliumzinc-oxide-for-neuromorphic-synaptic-devices}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices — https://4ort.xyz/entity/one-transistortwo-memristor-based-on-amorphous-indiumgalliumzinc-oxide-for-neuromorphic-synaptic-devices (retrieved 2026-05-24)
