Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

Research article (IEEE Transactions on Electron Devices, 2021) · cited 46× · AI/ML
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Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

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Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs. Retrieved May 24, 2026, from https://4ort.xyz/entity/machine-learning-aided-device-simulation-of-work-function-fluctuation-for-multichannel-gate-all-around-silicon-nanosheet
MLA “Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/machine-learning-aided-device-simulation-of-work-function-fluctuation-for-multichannel-gate-all-around-silicon-nanosheet.
BibTeX @misc{4ortxyz_machine-learning-aided-device-simulation-of-work-function-fluctuation-for-multichannel-gate-all-around-silicon-nanosheet_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs}}, year = {2026}, url = {https://4ort.xyz/entity/machine-learning-aided-device-simulation-of-work-function-fluctuation-for-multichannel-gate-all-around-silicon-nanosheet}, note = {Accessed: 2026-05-24}}
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