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Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

Research article (Advanced Materials, 2023) · cited 46× · AI/ML
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Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

Summary

Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels is a scholarly article[1].

Key Facts

  • Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels's instance of is recorded as scholarly article[2].

References

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Direct Wikidata claims

  1. [2] ↑ . wikidata.org.

Class ancestry

  1. [1] ↑ . Wikidata. wikidata.org.

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APA 4ort.xyz Knowledge Graph. (2026). Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels. Retrieved May 24, 2026, from https://4ort.xyz/entity/highly-reliable-textiletype-memristor-by-designing-aligned-nanochannels
MLA “Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/highly-reliable-textiletype-memristor-by-designing-aligned-nanochannels.
BibTeX @misc{4ortxyz_highly-reliable-textiletype-memristor-by-designing-aligned-nanochannels_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels}}, year = {2026}, url = {https://4ort.xyz/entity/highly-reliable-textiletype-memristor-by-designing-aligned-nanochannels}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels — https://4ort.xyz/entity/highly-reliable-textiletype-memristor-by-designing-aligned-nanochannels (retrieved 2026-05-24)

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