Home ›
Entities
› academia
› Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing
Research article (Journal of Applied Physics, 2025) · cited 21× · AI/ML
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing
Summary
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing is a scholarly article[1].
Key Facts
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing's instance of is recorded as scholarly article[2].
References
Programmatic citations — every numbered marker resolves to a verifiable graph row below.
Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing. Retrieved May 24, 2026, from https://4ort.xyz/entity/hafnium-oxide-based-ferroelectric-field-effect-transistors-from-materials-and-reliability-to-applications-in-storage-cla
MLA“Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/hafnium-oxide-based-ferroelectric-field-effect-transistors-from-materials-and-reliability-to-applications-in-storage-cla.
BibTeX@misc{4ortxyz_hafnium-oxide-based-ferroelectric-field-effect-transistors-from-materials-and-reliability-to-applications-in-storage-cla_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing}}, year = {2026}, url = {https://4ort.xyz/entity/hafnium-oxide-based-ferroelectric-field-effect-transistors-from-materials-and-reliability-to-applications-in-storage-cla}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing — https://4ort.xyz/entity/hafnium-oxide-based-ferroelectric-field-effect-transistors-from-materials-and-reliability-to-applications-in-storage-cla (retrieved 2026-05-24)
