Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes
Summary
Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes is a scholarly article[1].
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Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes. Retrieved May 24, 2026, from https://4ort.xyz/entity/compact-analytical-model-to-extract-write-static-noise-margin-wsnm-for-sram-cell-at-45-nm-and-65-nm-nodes
MLA“Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/compact-analytical-model-to-extract-write-static-noise-margin-wsnm-for-sram-cell-at-45-nm-and-65-nm-nodes.
BibTeX@misc{4ortxyz_compact-analytical-model-to-extract-write-static-noise-margin-wsnm-for-sram-cell-at-45-nm-and-65-nm-nodes_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes}}, year = {2026}, url = {https://4ort.xyz/entity/compact-analytical-model-to-extract-write-static-noise-margin-wsnm-for-sram-cell-at-45-nm-and-65-nm-nodes}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes — https://4ort.xyz/entity/compact-analytical-model-to-extract-write-static-noise-margin-wsnm-for-sram-cell-at-45-nm-and-65-nm-nodes (retrieved 2026-05-24)
