Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Research article (ACS Applied Electronic Materials, 2022) · cited 25× · AI/ML

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Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Summary

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses is a scholarly article^[1].

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Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses's instance of is recorded as scholarly article^[2].

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Direct Wikidata claims

[2] ↑ Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses — instance of (P31): scholarly article. wikidata.org.

Class ancestry

[1] ↑ Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses is an instance of scholarly article (scholarly article) [P31, primary]. Wikidata. wikidata.org.

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4ort.xyz Knowledge Graph. (2026). Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses. Retrieved May 24, 2026, from https://4ort.xyz/entity/asymmetric-gan-zno-engineered-resistive-memory-device-for-electronic-synapses

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“Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/asymmetric-gan-zno-engineered-resistive-memory-device-for-electronic-synapses.

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@misc{4ortxyz_asymmetric-gan-zno-engineered-resistive-memory-device-for-electronic-synapses_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses}}, year = {2026}, url = {https://4ort.xyz/entity/asymmetric-gan-zno-engineered-resistive-memory-device-for-electronic-synapses}, note = {Accessed: 2026-05-24}}

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According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses — https://4ort.xyz/entity/asymmetric-gan-zno-engineered-resistive-memory-device-for-electronic-synapses (retrieved 2026-05-24)

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