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Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
Research article (2023 International Electron Devices Meeting (IEDM), 2023) · cited 17× · AI/ML
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices
Summary
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices is a scholarly article[1].
Key Facts
Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices's instance of is recorded as scholarly article[2].
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Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices. Retrieved May 24, 2026, from https://4ort.xyz/entity/unveiling-the-influence-of-channel-thickness-on-pbti-and-lfn-in-sub-10-nm-thick-igzo-fets-a-holistic-perspective-for-adv
MLA“Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/unveiling-the-influence-of-channel-thickness-on-pbti-and-lfn-in-sub-10-nm-thick-igzo-fets-a-holistic-perspective-for-adv.
BibTeX@misc{4ortxyz_unveiling-the-influence-of-channel-thickness-on-pbti-and-lfn-in-sub-10-nm-thick-igzo-fets-a-holistic-perspective-for-adv_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices}}, year = {2026}, url = {https://4ort.xyz/entity/unveiling-the-influence-of-channel-thickness-on-pbti-and-lfn-in-sub-10-nm-thick-igzo-fets-a-holistic-perspective-for-adv}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices — https://4ort.xyz/entity/unveiling-the-influence-of-channel-thickness-on-pbti-and-lfn-in-sub-10-nm-thick-igzo-fets-a-holistic-perspective-for-adv (retrieved 2026-05-24)
