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Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
Research article (Symposium on VLSI Technology, 2021) · cited 41× · AI/ML
Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
Summary
Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology is a scholarly article[1].
Key Facts
Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology. Retrieved May 24, 2026, from https://4ort.xyz/entity/ultra-low-power-robust-3bit-cell-hf-0-5-zr-0-5-o-2-ferroelectric-finfet-with-high-endurance-for-advanced-computing-in-me
MLA“Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/ultra-low-power-robust-3bit-cell-hf-0-5-zr-0-5-o-2-ferroelectric-finfet-with-high-endurance-for-advanced-computing-in-me.
BibTeX@misc{4ortxyz_ultra-low-power-robust-3bit-cell-hf-0-5-zr-0-5-o-2-ferroelectric-finfet-with-high-endurance-for-advanced-computing-in-me_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology}}, year = {2026}, url = {https://4ort.xyz/entity/ultra-low-power-robust-3bit-cell-hf-0-5-zr-0-5-o-2-ferroelectric-finfet-with-high-endurance-for-advanced-computing-in-me}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology — https://4ort.xyz/entity/ultra-low-power-robust-3bit-cell-hf-0-5-zr-0-5-o-2-ferroelectric-finfet-with-high-endurance-for-advanced-computing-in-me (retrieved 2026-05-24)
