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Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

Research article (IEEE Transactions on Nuclear Science, 2015) · cited 32× · AI/ML
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Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

Summary

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs is a scholarly article[1].

Key Facts

  • Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs's instance of is recorded as scholarly article[2].

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Direct Wikidata claims

  1. [2] ↑ . wikidata.org.

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  1. [1] ↑ . Wikidata. wikidata.org.

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APA 4ort.xyz Knowledge Graph. (2026). Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs. Retrieved May 24, 2026, from https://4ort.xyz/entity/total-ionizing-dose-tid-effects-in-extremely-scaled-ultra-thin-channel-nanowire-nw-gate-all-around-gaa-ingaas-mosfets
MLA “Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/total-ionizing-dose-tid-effects-in-extremely-scaled-ultra-thin-channel-nanowire-nw-gate-all-around-gaa-ingaas-mosfets.
BibTeX @misc{4ortxyz_total-ionizing-dose-tid-effects-in-extremely-scaled-ultra-thin-channel-nanowire-nw-gate-all-around-gaa-ingaas-mosfets_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs}}, year = {2026}, url = {https://4ort.xyz/entity/total-ionizing-dose-tid-effects-in-extremely-scaled-ultra-thin-channel-nanowire-nw-gate-all-around-gaa-ingaas-mosfets}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs — https://4ort.xyz/entity/total-ionizing-dose-tid-effects-in-extremely-scaled-ultra-thin-channel-nanowire-nw-gate-all-around-gaa-ingaas-mosfets (retrieved 2026-05-24)

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