Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Research article (IEEE Transactions on Nuclear Science, 2021) · cited 25× · AI/ML

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Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Summary

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors is a scholarly article^[1].

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Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors's instance of is recorded as scholarly article^[2].

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Direct Wikidata claims

[2] ↑ Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors — instance of (P31): scholarly article. wikidata.org.

Class ancestry

[1] ↑ Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors is an instance of scholarly article (scholarly article) [P31, primary]. Wikidata. wikidata.org.

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@misc{4ortxyz_total-ionizing-dose-response-of-highly-scaled-gate-all-around-si-nanowire-cmos-transistors_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors}}, year = {2026}, url = {https://4ort.xyz/entity/total-ionizing-dose-response-of-highly-scaled-gate-all-around-si-nanowire-cmos-transistors}, note = {Accessed: 2026-05-24}}

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