The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance

Research article (IEEE Electron Device Letters, 2019) · cited 51× · AI/ML
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The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance

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The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance is a scholarly article[1].

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  • The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance's instance of is recorded as scholarly article[2].

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APA 4ort.xyz Knowledge Graph. (2026). The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance. Retrieved May 24, 2026, from https://4ort.xyz/entity/the-impact-of-resistance-drift-of-phase-change-memory-pcm-synaptic-devices-on-artificial-neural-network-performance
MLA “The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/the-impact-of-resistance-drift-of-phase-change-memory-pcm-synaptic-devices-on-artificial-neural-network-performance.
BibTeX @misc{4ortxyz_the-impact-of-resistance-drift-of-phase-change-memory-pcm-synaptic-devices-on-artificial-neural-network-performance_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance}}, year = {2026}, url = {https://4ort.xyz/entity/the-impact-of-resistance-drift-of-phase-change-memory-pcm-synaptic-devices-on-artificial-neural-network-performance}, note = {Accessed: 2026-05-24}}
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