Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

Research article (International Journal of RF and Microwave Computer-Aided Engineering, 2019) · cited 45× · AI/ML
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Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

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Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach. Retrieved May 24, 2026, from https://4ort.xyz/entity/small-signal-behavioral-modeling-technique-of-gan-high-electron-mobility-transistor-using-artificial-neural-network-an-a
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BibTeX @misc{4ortxyz_small-signal-behavioral-modeling-technique-of-gan-high-electron-mobility-transistor-using-artificial-neural-network-an-a_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach}}, year = {2026}, url = {https://4ort.xyz/entity/small-signal-behavioral-modeling-technique-of-gan-high-electron-mobility-transistor-using-artificial-neural-network-an-a}, note = {Accessed: 2026-05-24}}
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