Home ›
Entities
› academia
› Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems
Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems
Research article (Semiconductor Science and Technology, 2021) · cited 13× · AI/ML
Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems
Summary
Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems is a scholarly article[1].
Key Facts
Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems's instance of is recorded as scholarly article[2].
References
Programmatic citations — every numbered marker resolves to a verifiable graph row below.
Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems. Retrieved May 24, 2026, from https://4ort.xyz/entity/reliable-analog-resistive-switching-behaviors-achieved-using-memristive-devices-in-alo-i-sub-x-sub-i-hfo-i-sub-x-sub-i-b
MLA“Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/reliable-analog-resistive-switching-behaviors-achieved-using-memristive-devices-in-alo-i-sub-x-sub-i-hfo-i-sub-x-sub-i-b.
BibTeX@misc{4ortxyz_reliable-analog-resistive-switching-behaviors-achieved-using-memristive-devices-in-alo-i-sub-x-sub-i-hfo-i-sub-x-sub-i-b_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems}}, year = {2026}, url = {https://4ort.xyz/entity/reliable-analog-resistive-switching-behaviors-achieved-using-memristive-devices-in-alo-i-sub-x-sub-i-hfo-i-sub-x-sub-i-b}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Reliable analog resistive switching behaviors achieved using memristive devices in AlO<i> <sub>x</sub> </i>/HfO<i> <sub>x</sub> </i> bilayer structure for neuromorphic systems — https://4ort.xyz/entity/reliable-analog-resistive-switching-behaviors-achieved-using-memristive-devices-in-alo-i-sub-x-sub-i-hfo-i-sub-x-sub-i-b (retrieved 2026-05-24)