Home ›
Entities
› academia
› Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps
Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps
Research article (Journal of Computational Electronics, 2020) · cited 21× · AI/ML
Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps
Summary
Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps is a scholarly article[1].
Key Facts
Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps's instance of is recorded as scholarly article[2].
References
Programmatic citations — every numbered marker resolves to a verifiable graph row below.
Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps. Retrieved May 24, 2026, from https://4ort.xyz/entity/random-telegraph-noise-in-gate-all-around-silicon-nanowire-mosfets-induced-by-a-single-charge-trap-or-random-interface-t
MLA“Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/random-telegraph-noise-in-gate-all-around-silicon-nanowire-mosfets-induced-by-a-single-charge-trap-or-random-interface-t.
BibTeX@misc{4ortxyz_random-telegraph-noise-in-gate-all-around-silicon-nanowire-mosfets-induced-by-a-single-charge-trap-or-random-interface-t_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps}}, year = {2026}, url = {https://4ort.xyz/entity/random-telegraph-noise-in-gate-all-around-silicon-nanowire-mosfets-induced-by-a-single-charge-trap-or-random-interface-t}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps — https://4ort.xyz/entity/random-telegraph-noise-in-gate-all-around-silicon-nanowire-mosfets-induced-by-a-single-charge-trap-or-random-interface-t (retrieved 2026-05-24)
