Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)

Research article (IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022) · cited 19× · AI/ML
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Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)

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Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM) is a scholarly article[1].

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  • Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)'s instance of is recorded as scholarly article[2].

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APA 4ort.xyz Knowledge Graph. (2026). Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM). Retrieved May 24, 2026, from https://4ort.xyz/entity/modeling-and-design-for-magnetoelectric-ternary-content-addressable-memory-tcam
MLA “Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM).” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/modeling-and-design-for-magnetoelectric-ternary-content-addressable-memory-tcam.
BibTeX @misc{4ortxyz_modeling-and-design-for-magnetoelectric-ternary-content-addressable-memory-tcam_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM)}}, year = {2026}, url = {https://4ort.xyz/entity/modeling-and-design-for-magnetoelectric-ternary-content-addressable-memory-tcam}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Modeling and Design for Magnetoelectric Ternary Content Addressable Memory (TCAM) — https://4ort.xyz/entity/modeling-and-design-for-magnetoelectric-ternary-content-addressable-memory-tcam (retrieved 2026-05-24)

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