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Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in <i>W</i>-Band

Research article (IEEE Microwave and Wireless Components Letters, 2020) · cited 23× · AI/ML
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Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band

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Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in <i>W</i>-Band. Retrieved May 24, 2026, from https://4ort.xyz/entity/low-noise-amplifiers-using-100-nm-gate-length-gan-on-silicon-process-in-i-w-i-band
MLA “Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in <i>W</i>-Band.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/low-noise-amplifiers-using-100-nm-gate-length-gan-on-silicon-process-in-i-w-i-band.
BibTeX @misc{4ortxyz_low-noise-amplifiers-using-100-nm-gate-length-gan-on-silicon-process-in-i-w-i-band_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in <i>W</i>-Band}}, year = {2026}, url = {https://4ort.xyz/entity/low-noise-amplifiers-using-100-nm-gate-length-gan-on-silicon-process-in-i-w-i-band}, note = {Accessed: 2026-05-24}}
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