Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology
Summary
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology is a scholarly article[1].
Key Facts
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology. Retrieved May 24, 2026, from https://4ort.xyz/entity/low-frequency-noise-assessment-in-n-and-p-channel-sub-10nm-triple-gate-finfets-part-i-theory-and-methodology
MLA“Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/low-frequency-noise-assessment-in-n-and-p-channel-sub-10nm-triple-gate-finfets-part-i-theory-and-methodology.
BibTeX@misc{4ortxyz_low-frequency-noise-assessment-in-n-and-p-channel-sub-10nm-triple-gate-finfets-part-i-theory-and-methodology_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology}}, year = {2026}, url = {https://4ort.xyz/entity/low-frequency-noise-assessment-in-n-and-p-channel-sub-10nm-triple-gate-finfets-part-i-theory-and-methodology}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology — https://4ort.xyz/entity/low-frequency-noise-assessment-in-n-and-p-channel-sub-10nm-triple-gate-finfets-part-i-theory-and-methodology (retrieved 2026-05-24)
