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Layered Wide Bandgap Semiconductor GaPS<sub>4</sub> as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications
Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications
Summary
Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications is a scholarly article[1].
Key Facts
Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications's instance of is recorded as scholarly article[2].
References
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Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Layered Wide Bandgap Semiconductor GaPS<sub>4</sub> as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications. Retrieved May 24, 2026, from https://4ort.xyz/entity/layered-wide-bandgap-semiconductor-gaps-sub-4-sub-as-a-chargetrapping-medium-for-use-in-hightemperature-artificial-synap
MLA“Layered Wide Bandgap Semiconductor GaPS<sub>4</sub> as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/layered-wide-bandgap-semiconductor-gaps-sub-4-sub-as-a-chargetrapping-medium-for-use-in-hightemperature-artificial-synap.
BibTeX@misc{4ortxyz_layered-wide-bandgap-semiconductor-gaps-sub-4-sub-as-a-chargetrapping-medium-for-use-in-hightemperature-artificial-synap_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Layered Wide Bandgap Semiconductor GaPS<sub>4</sub> as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications}}, year = {2026}, url = {https://4ort.xyz/entity/layered-wide-bandgap-semiconductor-gaps-sub-4-sub-as-a-chargetrapping-medium-for-use-in-hightemperature-artificial-synap}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Layered Wide Bandgap Semiconductor GaPS<sub>4</sub> as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications — https://4ort.xyz/entity/layered-wide-bandgap-semiconductor-gaps-sub-4-sub-as-a-chargetrapping-medium-for-use-in-hightemperature-artificial-synap (retrieved 2026-05-24)
