Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

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Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

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Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs. Retrieved May 24, 2026, from https://4ort.xyz/entity/intermittency-induced-criticality-in-the-random-telegraph-noise-of-nanoscale-utbb-fd-soi-mosfets
MLA “Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/intermittency-induced-criticality-in-the-random-telegraph-noise-of-nanoscale-utbb-fd-soi-mosfets.
BibTeX @misc{4ortxyz_intermittency-induced-criticality-in-the-random-telegraph-noise-of-nanoscale-utbb-fd-soi-mosfets_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs}}, year = {2026}, url = {https://4ort.xyz/entity/intermittency-induced-criticality-in-the-random-telegraph-noise-of-nanoscale-utbb-fd-soi-mosfets}, note = {Accessed: 2026-05-24}}
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