Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

Research article (2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015) · cited 53× · AI/ML
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Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

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Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching. Retrieved May 24, 2026, from https://4ort.xyz/entity/integrated-sic-mosfet-module-with-ultra-low-parasitic-inductance-for-noise-free-ultra-high-speed-switching
MLA “Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/integrated-sic-mosfet-module-with-ultra-low-parasitic-inductance-for-noise-free-ultra-high-speed-switching.
BibTeX @misc{4ortxyz_integrated-sic-mosfet-module-with-ultra-low-parasitic-inductance-for-noise-free-ultra-high-speed-switching_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching}}, year = {2026}, url = {https://4ort.xyz/entity/integrated-sic-mosfet-module-with-ultra-low-parasitic-inductance-for-noise-free-ultra-high-speed-switching}, note = {Accessed: 2026-05-24}}
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