Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine is a scholarly article[1].
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APA4ort.xyz Knowledge Graph. (2026). Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine. Retrieved May 24, 2026, from https://4ort.xyz/entity/indiumgalliumzinc-oxide-based-synaptic-charge-trap-flash-for-spiking-neural-network-restricted-boltzmann-machine