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Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory
Research article (IEEE Transactions on Electron Devices, 2021) · cited 19× · AI/ML
Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory
Summary
Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory is a scholarly article[1].
Key Facts
Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory. Retrieved May 24, 2026, from https://4ort.xyz/entity/improving-performance-by-inserting-an-indium-oxide-layer-as-an-oxygen-ion-storage-layer-in-hfo2-based-resistive-random-a
MLA“Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/improving-performance-by-inserting-an-indium-oxide-layer-as-an-oxygen-ion-storage-layer-in-hfo2-based-resistive-random-a.
BibTeX@misc{4ortxyz_improving-performance-by-inserting-an-indium-oxide-layer-as-an-oxygen-ion-storage-layer-in-hfo2-based-resistive-random-a_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory}}, year = {2026}, url = {https://4ort.xyz/entity/improving-performance-by-inserting-an-indium-oxide-layer-as-an-oxygen-ion-storage-layer-in-hfo2-based-resistive-random-a}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory — https://4ort.xyz/entity/improving-performance-by-inserting-an-indium-oxide-layer-as-an-oxygen-ion-storage-layer-in-hfo2-based-resistive-random-a (retrieved 2026-05-24)
