HfO <sub>2</sub> -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior

Research article (ECS Journal of Solid State Science and Technology, 2021) · cited 17× · AI/ML
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HfO 2 -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior

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HfO 2 -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). HfO <sub>2</sub> -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior. Retrieved May 24, 2026, from https://4ort.xyz/entity/hfo-sub-2-sub-based-ferroelectric-field-effect-transistor-with-large-memory-window-and-good-synaptic-behavior
MLA “HfO <sub>2</sub> -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/hfo-sub-2-sub-based-ferroelectric-field-effect-transistor-with-large-memory-window-and-good-synaptic-behavior.
BibTeX @misc{4ortxyz_hfo-sub-2-sub-based-ferroelectric-field-effect-transistor-with-large-memory-window-and-good-synaptic-behavior_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{HfO <sub>2</sub> -based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior}}, year = {2026}, url = {https://4ort.xyz/entity/hfo-sub-2-sub-based-ferroelectric-field-effect-transistor-with-large-memory-window-and-good-synaptic-behavior}, note = {Accessed: 2026-05-24}}
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