Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM
Summary
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM is a scholarly article[1].
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Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. Retrieved May 24, 2026, from https://4ort.xyz/entity/experimental-characterization-of-the-static-noise-margins-of-strained-silicon-complementary-tunnel-fet-sram
MLA“Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/experimental-characterization-of-the-static-noise-margins-of-strained-silicon-complementary-tunnel-fet-sram.
BibTeX@misc{4ortxyz_experimental-characterization-of-the-static-noise-margins-of-strained-silicon-complementary-tunnel-fet-sram_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM}}, year = {2026}, url = {https://4ort.xyz/entity/experimental-characterization-of-the-static-noise-margins-of-strained-silicon-complementary-tunnel-fet-sram}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM — https://4ort.xyz/entity/experimental-characterization-of-the-static-noise-margins-of-strained-silicon-complementary-tunnel-fet-sram (retrieved 2026-05-24)
