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Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing
Research article (Journal of Material Science and Technology, 2025) · cited 11× · AI/ML
Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing
Summary
Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing is a scholarly article[1].
Key Facts
Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing. Retrieved May 24, 2026, from https://4ort.xyz/entity/enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp
MLA“Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp.
BibTeX@misc{4ortxyz_enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing}}, year = {2026}, url = {https://4ort.xyz/entity/enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing — https://4ort.xyz/entity/enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp (retrieved 2026-05-24)
