Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor

Research article (Journal of Alloys and Compounds, 2022) · cited 43× · AI/ML
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Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor

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Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor is a scholarly article[1].

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  • Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor's instance of is recorded as scholarly article[2].

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APA 4ort.xyz Knowledge Graph. (2026). Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor. Retrieved May 24, 2026, from https://4ort.xyz/entity/engineering-synaptic-plasticity-through-the-control-of-oxygen-vacancy-concentration-for-the-improvement-of-learning-accu
MLA “Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/engineering-synaptic-plasticity-through-the-control-of-oxygen-vacancy-concentration-for-the-improvement-of-learning-accu.
BibTeX @misc{4ortxyz_engineering-synaptic-plasticity-through-the-control-of-oxygen-vacancy-concentration-for-the-improvement-of-learning-accu_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor}}, year = {2026}, url = {https://4ort.xyz/entity/engineering-synaptic-plasticity-through-the-control-of-oxygen-vacancy-concentration-for-the-improvement-of-learning-accu}, note = {Accessed: 2026-05-24}}
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