Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

Research article (Japanese Journal of Applied Physics, 2019) · cited 15× · AI/ML
Press Enter · cited answer in seconds

Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

Summary

Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors is a scholarly article[1].

Key Facts

  • Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors's instance of is recorded as scholarly article[2].

📑 Cite this page

Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.

APA 4ort.xyz Knowledge Graph. (2026). Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors. Retrieved May 24, 2026, from https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p-
MLA “Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p-.
BibTeX @misc{4ortxyz_effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p-_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors}}, year = {2026}, url = {https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p-}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors — https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p- (retrieved 2026-05-24)

Canonical URL: https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p- · Last refreshed: