Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

Research article (2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017) · cited 16× · AI/ML
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Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

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Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer. Retrieved May 24, 2026, from https://4ort.xyz/entity/edge-termination-design-of-a-700-v-triple-resurf-ldmos-with-n-type-top-layer
MLA “Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/edge-termination-design-of-a-700-v-triple-resurf-ldmos-with-n-type-top-layer.
BibTeX @misc{4ortxyz_edge-termination-design-of-a-700-v-triple-resurf-ldmos-with-n-type-top-layer_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer}}, year = {2026}, url = {https://4ort.xyz/entity/edge-termination-design-of-a-700-v-triple-resurf-ldmos-with-n-type-top-layer}, note = {Accessed: 2026-05-24}}
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