Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)
Summary
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited) is a scholarly article[1].
Key Facts
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)'s instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited). Retrieved May 24, 2026, from https://4ort.xyz/entity/characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited
MLA“Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited).” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited.
BibTeX@misc{4ortxyz_characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)}}, year = {2026}, url = {https://4ort.xyz/entity/characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited) — https://4ort.xyz/entity/characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited (retrieved 2026-05-24)
