Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor

Research article (ACS Applied Materials & Interfaces, 2017) · cited 25× · AI/ML
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Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

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Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor. Retrieved May 24, 2026, from https://4ort.xyz/entity/carrier-number-fluctuation-induced-ultralow-1-i-f-i-noise-level-in-top-gated-graphene-field-effect-transistor
MLA “Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/carrier-number-fluctuation-induced-ultralow-1-i-f-i-noise-level-in-top-gated-graphene-field-effect-transistor.
BibTeX @misc{4ortxyz_carrier-number-fluctuation-induced-ultralow-1-i-f-i-noise-level-in-top-gated-graphene-field-effect-transistor_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor}}, year = {2026}, url = {https://4ort.xyz/entity/carrier-number-fluctuation-induced-ultralow-1-i-f-i-noise-level-in-top-gated-graphene-field-effect-transistor}, note = {Accessed: 2026-05-24}}
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