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Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics
Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics
Summary
Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics is a scholarly article[1].
Key Facts
Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics's instance of is recorded as scholarly article[2].
References
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Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics. Retrieved May 24, 2026, from https://4ort.xyz/entity/artificial-synapse-based-on-oxygen-vacancy-migration-in-ferroelectriclike-caxisaligned-crystalline-ingasno-semiconductor
MLA“Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/artificial-synapse-based-on-oxygen-vacancy-migration-in-ferroelectriclike-caxisaligned-crystalline-ingasno-semiconductor.
BibTeX@misc{4ortxyz_artificial-synapse-based-on-oxygen-vacancy-migration-in-ferroelectriclike-caxisaligned-crystalline-ingasno-semiconductor_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics}}, year = {2026}, url = {https://4ort.xyz/entity/artificial-synapse-based-on-oxygen-vacancy-migration-in-ferroelectriclike-caxisaligned-crystalline-ingasno-semiconductor}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics — https://4ort.xyz/entity/artificial-synapse-based-on-oxygen-vacancy-migration-in-ferroelectriclike-caxisaligned-crystalline-ingasno-semiconductor (retrieved 2026-05-24)
