An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention
Summary
An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention is a scholarly article[1].
Key Facts
An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention. Retrieved May 24, 2026, from https://4ort.xyz/entity/an-epitaxial-synaptic-device-made-by-a-band-offset-batio3-sr2iro4-bilayer-with-high-endurance-and-long-retention
MLA“An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/an-epitaxial-synaptic-device-made-by-a-band-offset-batio3-sr2iro4-bilayer-with-high-endurance-and-long-retention.
BibTeX@misc{4ortxyz_an-epitaxial-synaptic-device-made-by-a-band-offset-batio3-sr2iro4-bilayer-with-high-endurance-and-long-retention_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention}}, year = {2026}, url = {https://4ort.xyz/entity/an-epitaxial-synaptic-device-made-by-a-band-offset-batio3-sr2iro4-bilayer-with-high-endurance-and-long-retention}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): An epitaxial synaptic device made by a band-offset BaTiO3/Sr2IrO4 bilayer with high endurance and long retention — https://4ort.xyz/entity/an-epitaxial-synaptic-device-made-by-a-band-offset-batio3-sr2iro4-bilayer-with-high-endurance-and-long-retention (retrieved 2026-05-24)
