Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology. Retrieved May 24, 2026, from https://4ort.xyz/entity/a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology
MLA“A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology.
BibTeX@misc{4ortxyz_a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology}}, year = {2026}, url = {https://4ort.xyz/entity/a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology — https://4ort.xyz/entity/a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology (retrieved 2026-05-24)
