A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

Research article (IEEE Microwave and Wireless Components Letters, 2021) · cited 15× · AI/ML

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A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology

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A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology is a scholarly article^[1].

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A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology's instance of is recorded as scholarly article^[2].

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Authored by 5

Arnulf Leuther, Fabian Thome, F. Schäfer, P. Yagoubov, Sener Turk

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Arnulf Leuther, Fabian Thome, F. Schäfer, P. Yagoubov, Sener Turk

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[2] ↑ A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology — instance of (P31): scholarly article. wikidata.org.

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[1] ↑ A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology is an instance of scholarly article (scholarly article) [P31, primary]. Wikidata. wikidata.org.

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@misc{4ortxyz_a-67116-ghz-cryogenic-low-noise-amplifier-in-a-50-nm-ingaas-metamorphic-hemt-technology_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{A 67–116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology}}, year = {2026}, url = {https://4ort.xyz/entity/a-67116-ghz-cryogenic-low-noise-amplifier-in-a-50-nm-ingaas-metamorphic-hemt-technology}, note = {Accessed: 2026-05-24}}

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