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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Research article (IEEE Transactions on Microwave Theory and Techniques, 2021) · cited 35× · AI/ML
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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation. Retrieved May 24, 2026, from https://4ort.xyz/entity/a-50-nm-gate-length-metamorphic-hemt-technology-optimized-for-cryogenic-ultra-low-noise-operation
MLA “A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/a-50-nm-gate-length-metamorphic-hemt-technology-optimized-for-cryogenic-ultra-low-noise-operation.
BibTeX @misc{4ortxyz_a-50-nm-gate-length-metamorphic-hemt-technology-optimized-for-cryogenic-ultra-low-noise-operation_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation}}, year = {2026}, url = {https://4ort.xyz/entity/a-50-nm-gate-length-metamorphic-hemt-technology-optimized-for-cryogenic-ultra-low-noise-operation}, note = {Accessed: 2026-05-24}}
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