5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Research article (2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020) · cited 26× · AI/ML

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5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Summary

5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology is a scholarly article^[1].

Key Facts

5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology's instance of is recorded as scholarly article^[2].

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Direct Wikidata claims

[2] ↑ 5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology — instance of (P31): scholarly article. wikidata.org.

Class ancestry

[1] ↑ 5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology is an instance of scholarly article (scholarly article) [P31, primary]. Wikidata. wikidata.org.

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APA

4ort.xyz Knowledge Graph. (2026). 5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. Retrieved May 24, 2026, from https://4ort.xyz/entity/5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g

MLA

“5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g.

BibTeX

@misc{4ortxyz_5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology}}, year = {2026}, url = {https://4ort.xyz/entity/5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g}, note = {Accessed: 2026-05-24}}

LLM prompt

According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): 5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology — https://4ort.xyz/entity/5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g (retrieved 2026-05-24)

Canonical URL: https://4ort.xyz/entity/5-5-a-2-1e-sup-sup-temporal-noise-and-105db-parasitic-light-sensitivity-backside-illuminated-2-3m-pixel-voltage-domain-g · Last refreshed: May 24, 2026