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3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature
Research article (2018 IEEE International Electron Devices Meeting (IEDM), 2018) · cited 47× · AI/ML
3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature
Summary
3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature is a scholarly article[1].
Key Facts
3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature's instance of is recorded as scholarly article[2].
References
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APA4ort.xyz Knowledge Graph. (2026). 3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature. Retrieved May 24, 2026, from https://4ort.xyz/entity/3d-monolithic-stacked-1t1r-cells-using-monolayer-mos-lt-inf-gt-2-lt-inf-gt-fet-and-hbn-rram-fabricated-at-low-150c-tempe
MLA“3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/3d-monolithic-stacked-1t1r-cells-using-monolayer-mos-lt-inf-gt-2-lt-inf-gt-fet-and-hbn-rram-fabricated-at-low-150c-tempe.
BibTeX@misc{4ortxyz_3d-monolithic-stacked-1t1r-cells-using-monolayer-mos-lt-inf-gt-2-lt-inf-gt-fet-and-hbn-rram-fabricated-at-low-150c-tempe_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature}}, year = {2026}, url = {https://4ort.xyz/entity/3d-monolithic-stacked-1t1r-cells-using-monolayer-mos-lt-inf-gt-2-lt-inf-gt-fet-and-hbn-rram-fabricated-at-low-150c-tempe}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): 3D Monolithic Stacked 1T1R cells using Monolayer MoS<inf>2</inf> FET and hBN RRAM Fabricated at Low (150°C) Temperature — https://4ort.xyz/entity/3d-monolithic-stacked-1t1r-cells-using-monolayer-mos-lt-inf-gt-2-lt-inf-gt-fet-and-hbn-rram-fabricated-at-low-150c-tempe (retrieved 2026-05-24)