# Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade

> Research article (IEEE Electron Device Letters, 2018) · cited 48× · AI/ML

**Wikidata**: [openalex:W2804200660](https://www.wikidata.org/wiki/openalex:W2804200660)  
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