# Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

> Research article (IEEE Transactions on Nuclear Science, 2015) · cited 32× · AI/ML

**Wikidata**: [openalex:W2334612345](https://www.wikidata.org/wiki/openalex:W2334612345)  
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