# Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

> Research article (IEEE Transactions on Nuclear Science, 2019) · cited 33× · AI/ML

**Wikidata**: [openalex:W2992820275](https://www.wikidata.org/wiki/openalex:W2992820275)  
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