# Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

> Research article (IET Circuits Devices & Systems, 2020) · cited 22× · AI/ML

**Wikidata**: [openalex:W3093519353](https://www.wikidata.org/wiki/openalex:W3093519353)  
**Source**: https://4ort.xyz/entity/single-and-doublegate-based-algan-gan-moshemts-for-the-design-of-lownoise-amplifiers-a-comparative-study