# RF <i>p</i>-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

> Research article (IEEE Electron Device Letters, 2023) · cited 17× · AI/ML

**Wikidata**: [openalex:W4384080787](https://www.wikidata.org/wiki/openalex:W4384080787)  
**Source**: https://4ort.xyz/entity/rf-i-p-i-gan-hemt-with-0-9-db-noise-figure-and-12-8-db-associated-gain-for-lna-applications