# Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

> Research article (AIP Advances, 2016) · cited 40× · AI/ML

**Wikidata**: [openalex:W2507504161](https://www.wikidata.org/wiki/openalex:W2507504161)  
**Source**: https://4ort.xyz/entity/oxygen-vacancy-effects-in-hfo2-based-resistive-switching-memory-first-principle-study