# Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

> Research article (IEEE Transactions on Microwave Theory and Techniques, 2020) · cited 36× · AI/ML

**Wikidata**: [openalex:W3014432668](https://www.wikidata.org/wiki/openalex:W3014432668)  
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